Name: BSM35GB120DN2HOSA1
Brand: Infineon Technologies
SKU: BSM35GB120DN2HOSA1
Availability: InStock

REF: BSM35GB120DN2HOSA1 Infineon Technologies

BSM35GB120DN2HOSA1

IGBT MOD 1200V 50A 280W

BSM35GB120DN2HOSA1 is a Transistors - IGBTs - Modules manufactured by Infineon Technologies. IGBT MOD 1200V 50A 280W. Key specifications: mounting type Chassis Mount, operating temperature 150°C (TJ), package / case Module, current - collector (ic) (max) 50 A.

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In Stock: 3,283

Specifications

15 parameters

Product Status	Obsolete
IGBT Type	-
Configuration	Half Bridge
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	50 A
Power - Max	280 W
Vce(on) (Max) @ Vge, Ic	3.2V @ 15V, 35A
Current - Collector Cutoff (Max)	1 mA

Input Capacitance (Cies) @ Vce	2 nF @ 25 V
Input	Standard
NTC Thermistor	No
Operating Temperature	150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	Module