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BSM30GP60B2BOSA1

In Stock: 7,185
BSM30GP60B2BOSA1 - Infineon Technologies - Transistors - IGBTs - Modules
REF: BSM30GP60B2BOSA1 Infineon Technologies
BSM30GP60B2BOSA1

Infineon Technologies

IGBT MODULE 600V 50A 180W

BSM30GP60B2BOSA1 is a Transistors - IGBTs - Modules manufactured by Infineon Technologies. IGBT MODULE 600V 50A 180W. Key specifications: mounting type Chassis Mount, operating temperature -40°C ~ 125°C, package / case Module, current - collector (ic) (max) 50 A.

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In Stock: 7,185

Specifications

15 parameters
Product StatusObsolete
IGBT Type-
ConfigurationFull Bridge
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector (Ic) (Max)50 A
Power - Max180 W
Vce(on) (Max) @ Vge, Ic2.45V @ 15V, 30A
Current - Collector Cutoff (Max)500 µA
Input Capacitance (Cies) @ Vce1.6 nF @ 25 V
InputThree Phase Bridge Rectifier
NTC ThermistorYes
Operating Temperature-40°C ~ 125°C
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule

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