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BSM200GA170DN2SE325HOSA1

In Stock: 5,544
BSM200GA170DN2SE325HOSA1 - Infineon Technologies - Transistors - Bipolar (BJT) - Single
REF: BSM200GA170DN2SE325HOSA1 Infineon Technologies
BSM200GA170DN2SE325HOSA1

Infineon Technologies

IGBT MODULE

BSM200GA170DN2SE325HOSA1 is a Transistors - Bipolar (BJT) - Single manufactured by Infineon Technologies. IGBT MODULE.

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In Stock: 5,544

Specifications

13 parameters
Product StatusActive
Transistor Type-
Current - Collector (Ic) (Max)-
Voltage - Collector Emitter Breakdown (Max)-
Vce Saturation (Max) @ Ib, Ic-
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce-
Power - Max-
Frequency - Transition-
Operating Temperature-
Mounting Type-
Package / Case-
Supplier Device Package-

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