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BSM150GB170DN2E3256HDLA1

In Stock: 125
BSM150GB170DN2E3256HDLA1 - Infineon Technologies - Transistors - IGBTs - Modules
REF: BSM150GB170DN2E3256HDLA1 Infineon Technologies
BSM150GB170DN2E3256HDLA1

Infineon Technologies

BSM150GB170DN2 - INSULATED GATE

BSM150GB170DN2E3256HDLA1 is a Transistors - IGBTs - Modules manufactured by Infineon Technologies. BSM150GB170DN2 - INSULATED GATE. Key specifications: mounting type Chassis Mount, operating temperature 150°C (TJ), package / case Module, current - collector (ic) (max) 300 A.

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In Stock: 125

Specifications

15 parameters
Product StatusActive
IGBT Type-
Configuration2 Independent
Voltage - Collector Emitter Breakdown (Max)1700 V
Current - Collector (Ic) (Max)300 A
Power - Max1250 W
Vce(on) (Max) @ Vge, Ic3.2V @ 15V, 150A
Current - Collector Cutoff (Max)300 µA
Input Capacitance (Cies) @ Vce10 nF @ 25 V
InputStandard
NTC ThermistorNo
Operating Temperature150°C (TJ)
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule

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