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BSM150GB120DN2HOSA1

In Stock: 9,151
BSM150GB120DN2HOSA1 - Infineon Technologies - Transistors - IGBTs - Modules
REF: BSM150GB120DN2HOSA1 Infineon Technologies
BSM150GB120DN2HOSA1

Infineon Technologies

IGBT MOD 1200V 210A 1250W

BSM150GB120DN2HOSA1 is a Transistors - IGBTs - Modules manufactured by Infineon Technologies. IGBT MOD 1200V 210A 1250W. Key specifications: mounting type Chassis Mount, operating temperature 150°C (TJ), package / case Module, current - collector (ic) (max) 210 A.

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In Stock: 9,151

Specifications

15 parameters
Product StatusNot For New Designs
IGBT Type-
ConfigurationHalf Bridge
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)210 A
Power - Max1250 W
Vce(on) (Max) @ Vge, Ic3V @ 15V, 150A
Current - Collector Cutoff (Max)2.8 mA
Input Capacitance (Cies) @ Vce11 nF @ 25 V
InputStandard
NTC ThermistorNo
Operating Temperature150°C (TJ)
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule

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