BSM10GP120B9BOSA1

In Stock: 3,675
BSM10GP120B9BOSA1 - Infineon Technologies - Transistors - IGBTs - Modules
REF: BSM10GP120B9BOSA1 Infineon Technologies
BSM10GP120B9BOSA1

Infineon Technologies

IGBT MODULE 1200V

BSM10GP120B9BOSA1 is a Transistors - IGBTs - Modules manufactured by Infineon Technologies. IGBT MODULE 1200V. Key specifications: mounting type Chassis Mount, operating temperature -40°C ~ 125°C, package / case Module, current - collector (ic) (max) 20 A.

In Stock: 3,675

Specifications

15 parameters
Product StatusLast Time Buy
IGBT Type-
ConfigurationThree Phase Inverter
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)20 A
Power - Max100 W
Vce(on) (Max) @ Vge, Ic2.85V @ 15V, 10A
Current - Collector Cutoff (Max)500 µA
Input Capacitance (Cies) @ Vce600 pF @ 25 V
InputThree Phase Bridge Rectifier
NTC ThermistorYes
Operating Temperature-40°C ~ 125°C
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule

Need a Quote for BSM10GP120B9BOSA1?

Submit your RFQ and get a quote within 24 hours.

Need components fast? Get pricing & lead time within 24 hours. Submit an RFQ →