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BSM100GD120DN2BOSA1

In Stock: 9,231
BSM100GD120DN2BOSA1 - Infineon Technologies - Transistors - IGBTs - Modules
REF: BSM100GD120DN2BOSA1 Infineon Technologies
BSM100GD120DN2BOSA1

Infineon Technologies

IGBT MOD 1200V 150A 680W

BSM100GD120DN2BOSA1 is a Transistors - IGBTs - Modules manufactured by Infineon Technologies. IGBT MOD 1200V 150A 680W. Key specifications: mounting type Chassis Mount, operating temperature 150°C (TJ), package / case Module, current - collector (ic) (max) 150 A.

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In Stock: 9,231

Specifications

15 parameters
Product StatusNot For New Designs
IGBT Type-
ConfigurationThree Phase Inverter
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)150 A
Power - Max680 W
Vce(on) (Max) @ Vge, Ic3V @ 15V, 100A
Current - Collector Cutoff (Max)2 mA
Input Capacitance (Cies) @ Vce6.5 nF @ 25 V
InputStandard
NTC ThermistorNo
Operating Temperature150°C (TJ)
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule

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