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BSM100GAL120DLCKHOSA1

In Stock: 1,922
BSM100GAL120DLCKHOSA1 - Infineon Technologies - Transistors - IGBTs - Modules
REF: BSM100GAL120DLCKHOSA1 Infineon Technologies
BSM100GAL120DLCKHOSA1

Infineon Technologies

IGBT MOD 1200V 205A 835W

BSM100GAL120DLCKHOSA1 is a Transistors - IGBTs - Modules manufactured by Infineon Technologies. IGBT MOD 1200V 205A 835W. Key specifications: mounting type Chassis Mount, operating temperature -40°C ~ 125°C, package / case Module, current - collector (ic) (max) 205 A.

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In Stock: 1,922

Specifications

15 parameters
Product StatusObsolete
IGBT Type-
ConfigurationSingle Chopper
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)205 A
Power - Max835 W
Vce(on) (Max) @ Vge, Ic2.6V @ 15V, 100A
Current - Collector Cutoff (Max)5 mA
Input Capacitance (Cies) @ Vce6.5 nF @ 25 V
InputStandard
NTC ThermistorNo
Operating Temperature-40°C ~ 125°C
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule

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