Name: BSC900N20NS3GATMA1
Brand: Infineon Technologies
SKU: BSC900N20NS3GATMA1
Price: 2.35 USD
Availability: InStock

REF: BSC900N20NS3GATMA1 Infineon Technologies

BSC900N20NS3GATMA1

Infineon Technologies

MOSFET N-CH 200V 15.2A TDSON-8

BSC900N20NS3GATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 200V 15.2A TDSON-8. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerTDFN.

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In Stock: 2,840

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	15.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	90mOhm @ 7.6A, 10V
Vgs(th) (Max) @ Id	4V @ 30µA
Gate Charge (Qg) (Max) @ Vgs	11.6 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	920 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	62.5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TDSON-8-5
Package / Case	8-PowerTDFN