Name: BSC252N10NSFGATMA1
Brand: Infineon Technologies
SKU: BSC252N10NSFGATMA1
Price: 1.58 USD
Availability: InStock

REF: BSC252N10NSFGATMA1 Infineon Technologies

BSC252N10NSFGATMA1

Infineon Technologies

MOSFET N-CH 100V 7.2A/40A TDSON

BSC252N10NSFGATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 100V 7.2A/40A TDSON. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerTDFN.

Datasheet Request a Quote

In Stock: 2,437

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	7.2A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	25.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	4V @ 43µA
Gate Charge (Qg) (Max) @ Vgs	17 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1100 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	78W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TDSON-8-1
Package / Case	8-PowerTDFN