Name: BSC22DN20NS3GATMA1
Brand: Infineon Technologies
SKU: BSC22DN20NS3GATMA1
Price: 1.43 USD
Availability: InStock

REF: BSC22DN20NS3GATMA1 Infineon Technologies

BSC22DN20NS3GATMA1

Infineon Technologies

MOSFET N-CH 200V 7A TDSON-8-5

BSC22DN20NS3GATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 200V 7A TDSON-8-5. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerTDFN.

Datasheet Request a Quote

In Stock: 7,114

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	225mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id	4V @ 13µA
Gate Charge (Qg) (Max) @ Vgs	5.6 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	430 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	34W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TDSON-8-5
Package / Case	8-PowerTDFN