Name: BSC200P03LSGAUMA1
Brand: Infineon Technologies
SKU: BSC200P03LSGAUMA1
Availability: InStock

REF: BSC200P03LSGAUMA1 Infineon Technologies

BSC200P03LSGAUMA1

MOSFET P-CH 30V 9.9/12.5A 8TDSON

BSC200P03LSGAUMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET P-CH 30V 9.9/12.5A 8TDSON. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerTDFN.

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In Stock: 5,147

Specifications

17 parameters

Product Status	Obsolete
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	9.9A (Ta), 12.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	20mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id	2.2V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	48.5 nC @ 10 V

Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	2430 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 63W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TDSON-8-1
Package / Case	8-PowerTDFN