Name: BSC196N10NSGATMA1
Brand: Infineon Technologies
SKU: BSC196N10NSGATMA1
Price: 1.46 USD
Availability: InStock

REF: BSC196N10NSGATMA1 Infineon Technologies

BSC196N10NSGATMA1

Infineon Technologies

MOSFET N-CH 100V 8.5A/45A TDSON

BSC196N10NSGATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 100V 8.5A/45A TDSON. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerTDFN.

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In Stock: 4,568

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	8.5A (Ta), 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	19.6mOhm @ 45A, 10V
Vgs(th) (Max) @ Id	4V @ 42µA
Gate Charge (Qg) (Max) @ Vgs	34 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2300 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	78W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TDSON-8-1
Package / Case	8-PowerTDFN