Name: BSC160N10NS3GATMA1
Brand: Infineon Technologies
SKU: BSC160N10NS3GATMA1
Price: 1.63 USD
Availability: InStock

REF: BSC160N10NS3GATMA1 Infineon Technologies

BSC160N10NS3GATMA1

Infineon Technologies

MOSFET N-CH 100V 8.8A/42A TDSON

BSC160N10NS3GATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 100V 8.8A/42A TDSON. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerTDFN.

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In Stock: 1,494

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	8.8A (Ta), 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	16mOhm @ 33A, 10V
Vgs(th) (Max) @ Id	3.5V @ 33µA
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1700 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	60W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TDSON-8-1
Package / Case	8-PowerTDFN