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BSC12DN20NS3GATMA1

In Stock: 6,266
BSC12DN20NS3GATMA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: BSC12DN20NS3GATMA1 Infineon Technologies
BSC12DN20NS3GATMA1

Infineon Technologies

MOSFET N-CH 200V 11.3A 8TDSON

BSC12DN20NS3GATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 200V 11.3A 8TDSON. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerTDFN.

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In Stock: 6,266

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200 V
Current - Continuous Drain (Id) @ 25°C11.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs125mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs8.7 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds680 pF @ 100 V
FET Feature-
Power Dissipation (Max)50W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TDSON-8-5
Package / Case8-PowerTDFN

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