Name: BSC119N03S G
Brand: Infineon Technologies
SKU: BSC119N03S G
Availability: InStock

REF: BSC119N03S G Infineon Technologies

BSC119N03S G

MOSFET N-CH 30V 11.9A/30A TDSON

BSC119N03S G is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 30V 11.9A/30A TDSON. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerTDFN.

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In Stock: 6,236

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	11.9A (Ta), 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	11.9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs	11 nC @ 5 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1370 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	2.8W (Ta), 43W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TDSON-8-1
Package / Case	8-PowerTDFN