Name: BSC0906NSE8189ATMA1
Brand: Infineon Technologies
SKU: BSC0906NSE8189ATMA1
Availability: InStock

REF: BSC0906NSE8189ATMA1 Infineon Technologies

BSC0906NSE8189ATMA1

MOSFET N-CH 30V TDSON

BSC0906NSE8189ATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 30V TDSON. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerTDFN.

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In Stock: 1,778

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	18A (Ta), 63A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	18 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1200 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 30W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TDSON-8-34
Package / Case	8-PowerTDFN