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BSC082N10LSGATMA1

In Stock: 3,836
BSC082N10LSGATMA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: BSC082N10LSGATMA1 Infineon Technologies
BSC082N10LSGATMA1

Infineon Technologies

MOSFET N-CH 100V 13.8A 8TDSON

BSC082N10LSGATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 100V 13.8A 8TDSON. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerTDFN.

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In Stock: 3,836

Specifications

17 parameters
Product StatusNot For New Designs
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C13.8A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs8.2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id2.4V @ 110µA
Gate Charge (Qg) (Max) @ Vgs104 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds7400 pF @ 50 V
FET Feature-
Power Dissipation (Max)156W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TDSON-8-1
Package / Case8-PowerTDFN

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