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BSC080P03LSGAUMA1

In Stock: 4,081
BSC080P03LSGAUMA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: BSC080P03LSGAUMA1 Infineon Technologies
BSC080P03LSGAUMA1

Infineon Technologies

MOSFET P-CH 30V 16A/30A TDSON-8

BSC080P03LSGAUMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET P-CH 30V 16A/30A TDSON-8. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerVDFN.

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In Stock: 4,081

Specifications

17 parameters
Product StatusNot For New Designs
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C16A (Ta), 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs122.4 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds6140 pF @ 15 V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 89W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TDSON-8-3
Package / Case8-PowerVDFN

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