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BSC080N12LSGATMA1

In Stock: 9,677
BSC080N12LSGATMA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: BSC080N12LSGATMA1 Infineon Technologies
BSC080N12LSGATMA1

Infineon Technologies

TRENCH >=100V PG-TDSON-8

BSC080N12LSGATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. TRENCH >=100V PG-TDSON-8. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerTDFN.

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In Stock: 9,677

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)120 V
Current - Continuous Drain (Id) @ 25°C12A (Ta), 99A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id2.4V @ 112µA
Gate Charge (Qg) (Max) @ Vgs79 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds7400 pF @ 60 V
FET Feature-
Power Dissipation (Max)156W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TDSON-8
Package / Case8-PowerTDFN

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