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BSC079N10NSGATMA1

In Stock: 2,073
BSC079N10NSGATMA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: BSC079N10NSGATMA1 Infineon Technologies
BSC079N10NSGATMA1

Infineon Technologies

MOSFET N-CH 100V 13.4A 8TDSON

BSC079N10NSGATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 100V 13.4A 8TDSON. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerTDFN.

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In Stock: 2,073

Specifications

17 parameters
Product StatusNot For New Designs
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C13.4A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs7.9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id4V @ 110µA
Gate Charge (Qg) (Max) @ Vgs87 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5900 pF @ 50 V
FET Feature-
Power Dissipation (Max)156W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TDSON-8-1
Package / Case8-PowerTDFN

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