Name: BSC060P03NS3EGATMA1
Brand: Infineon Technologies
SKU: BSC060P03NS3EGATMA1
Price: 1.43 USD
Availability: InStock

REF: BSC060P03NS3EGATMA1 Infineon Technologies

BSC060P03NS3EGATMA1

Infineon Technologies

MOSFET P-CH 30V 17.7/100A 8TDSON

BSC060P03NS3EGATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET P-CH 30V 17.7/100A 8TDSON. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerTDFN.

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In Stock: 7,275

Specifications

17 parameters

Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	17.7A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	3.1V @ 150µA
Gate Charge (Qg) (Max) @ Vgs	81 nC @ 10 V

Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	6020 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 83W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TDSON-8-1
Package / Case	8-PowerTDFN