Name: BSC048N025S G
Brand: Infineon Technologies
SKU: BSC048N025S G
Availability: InStock

REF: BSC048N025S G Infineon Technologies

BSC048N025S G

MOSFET N-CH 25V 19A/89A TDSON

BSC048N025S G is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 25V 19A/89A TDSON. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerTDFN.

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In Stock: 4,359

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25 V
Current - Continuous Drain (Id) @ 25°C	19A (Ta), 89A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	2V @ 35µA
Gate Charge (Qg) (Max) @ Vgs	21 nC @ 5 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2670 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	2.8W (Ta), 63W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TDSON-8-1
Package / Case	8-PowerTDFN