Name: BSC042NE7NS3GATMA1
Brand: Infineon Technologies
SKU: BSC042NE7NS3GATMA1
Price: 3.52 USD
Availability: InStock

REF: BSC042NE7NS3GATMA1 Infineon Technologies

BSC042NE7NS3GATMA1

Infineon Technologies

MOSFET N-CH 75V 19A/100A TDSON

BSC042NE7NS3GATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 75V 19A/100A TDSON. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerTDFN.

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In Stock: 2,895

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	75 V
Current - Continuous Drain (Id) @ 25°C	19A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	4.2mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	3.8V @ 91µA
Gate Charge (Qg) (Max) @ Vgs	69 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4800 pF @ 37.5 V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 125W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TDSON-8-1
Package / Case	8-PowerTDFN