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BSC029N025SG

In Stock: 8,868
BSC029N025SG - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: BSC029N025SG Infineon Technologies
BSC029N025SG

Infineon Technologies

N-CHANNEL POWER MOSFET

BSC029N025SG is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. N-CHANNEL POWER MOSFET. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerTDFN.

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In Stock: 8,868

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25 V
Current - Continuous Drain (Id) @ 25°C24A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs2.9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id2V @ 80µA
Gate Charge (Qg) (Max) @ Vgs41 nC @ 5 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5090 pF @ 15 V
FET Feature-
Power Dissipation (Max)2.8W (Ta), 78W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TDSON-8-1
Package / Case8-PowerTDFN

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