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BSC019N02KSGAUMA1

In Stock: 4,736
BSC019N02KSGAUMA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: BSC019N02KSGAUMA1 Infineon Technologies
BSC019N02KSGAUMA1

Infineon Technologies

MOSFET N-CH 20V 30A/100A TDSON

BSC019N02KSGAUMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 20V 30A/100A TDSON. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerTDFN.

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In Stock: 4,736

Specifications

17 parameters
Product StatusNot For New Designs
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C30A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs1.95mOhm @ 50A, 4.5V
Vgs(th) (Max) @ Id1.2V @ 350µA
Gate Charge (Qg) (Max) @ Vgs85 nC @ 4.5 V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds13000 pF @ 10 V
FET Feature-
Power Dissipation (Max)2.8W (Ta), 104W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TDSON-8-1
Package / Case8-PowerTDFN

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