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BSC010NE2LSIATMA1

In Stock: 2,836
BSC010NE2LSIATMA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: BSC010NE2LSIATMA1 Infineon Technologies
BSC010NE2LSIATMA1

Infineon Technologies

MOSFET N-CH 25V 38A/100A TDSON

BSC010NE2LSIATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 25V 38A/100A TDSON. Key specifications: mounting type Surface Mount, package / case 8-PowerTDFN.

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In Stock: 2,836

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25 V
Current - Continuous Drain (Id) @ 25°C38A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.05mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs59 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4200 pF @ 12 V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 96W (Tc)
Operating Temperature-
Mounting TypeSurface Mount
Supplier Device PackagePG-TDSON-8-7
Package / Case8-PowerTDFN

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