Name: BSB056N10NN3GXUMA1
Brand: Infineon Technologies
SKU: BSB056N10NN3GXUMA1
Price: 4.46 USD
Availability: InStock

REF: BSB056N10NN3GXUMA1 Infineon Technologies

BSB056N10NN3GXUMA1

Infineon Technologies

MOSFET N-CH 100V 9A/83A 2WDSON

BSB056N10NN3GXUMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 100V 9A/83A 2WDSON. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 150°C (TJ), package / case 3-WDSON.

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In Stock: 7,880

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	9A (Ta), 83A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	5.6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	3.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	74 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	5500 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	2.8W (Ta), 78W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	MG-WDSON-2, CanPAK M™
Package / Case	3-WDSON