Name: BSB012N03LX3 G
Brand: Infineon Technologies
SKU: BSB012N03LX3 G
Availability: InStock

REF: BSB012N03LX3 G Infineon Technologies

BSB012N03LX3 G

MOSFET N-CH 30V 39A/180A 2WDSON

BSB012N03LX3 G is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 30V 39A/180A 2WDSON. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 150°C (TJ), package / case 3-WDSON.

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In Stock: 4,094

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	39A (Ta), 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	169 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	16900 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	2.8W (Ta), 89W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	MG-WDSON-2, CanPAK M™
Package / Case	3-WDSON