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BCR555E6327HTSA1

In Stock: 33
BCR555E6327HTSA1 - Infineon Technologies - Transistors - Bipolar (BJT) - Single, Pre-Biased
REF: BCR555E6327HTSA1 Infineon Technologies
BCR555E6327HTSA1

Infineon Technologies

TRANS PREBIAS PNP 50V SOT23-3

BCR555E6327HTSA1 is a Transistors - Bipolar (BJT) - Single, Pre-Biased manufactured by Infineon Technologies. TRANS PREBIAS PNP 50V SOT23-3. Key specifications: mounting type Surface Mount, package / case TO-236-3, SC-59, SOT-23-3, current - collector (ic) (max) 500 mA, power - max 330 mW.

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In Stock: 33

Specifications

14 parameters
Product StatusNot For New Designs
Transistor TypePNP - Pre-Biased
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Resistor - Base (R1)2.2 kOhms
Resistor - Emitter Base (R2)10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)100nA (ICBO)
Frequency - Transition150 MHz
Power - Max330 mW
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackagePG-SOT23

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