BCR135E6433 - Infineon Technologies - Transistors - Bipolar (BJT) - Single, Pre-Biased
REF: BCR135E6433 Infineon Technologies
BCR135E6433

Infineon Technologies

BIPOLAR DIGITAL TRANSISTOR

BCR135E6433 is a Transistors - Bipolar (BJT) - Single, Pre-Biased manufactured by Infineon Technologies. BIPOLAR DIGITAL TRANSISTOR. Key specifications: mounting type Surface Mount, package / case TO-236-3, SC-59, SOT-23-3, current - collector (ic) (max) 100 mA, power - max 200 mW.

In Stock: 20,000

Specifications

14 parameters
Product StatusActive
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Resistor - Base (R1)10 kOhms
Resistor - Emitter Base (R2)47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)100nA (ICBO)
Frequency - Transition150 MHz
Power - Max200 mW
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackagePG-SOT23-3-11

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