BCR129SE6327 - Infineon Technologies - Transistors - Bipolar (BJT) - Arrays, Pre-Biased
REF: BCR129SE6327 Infineon Technologies
BCR129SE6327

Infineon Technologies

BIPOLAR DIGITAL TRANSISTOR

BCR129SE6327 is a Transistors - Bipolar (BJT) - Arrays, Pre-Biased manufactured by Infineon Technologies. BIPOLAR DIGITAL TRANSISTOR. Key specifications: mounting type Surface Mount, package / case TO-236-3, SC-59, SOT-23-3, current - collector (ic) (max) 100mA, power - max 250mW.

In Stock: 2,163

Specifications

14 parameters
Product StatusActive
Transistor Type2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)10kOhms
Resistor - Emitter Base (R2)-
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)100nA (ICBO)
Frequency - Transition150MHz
Power - Max250mW
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackagePG-SOT23-3-11

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