RFQ List My Parts 0
Get a Quote Contact

BCR 116S H6727

In Stock: 8,942
BCR 116S H6727 - Infineon Technologies - Transistors - Bipolar (BJT) - Arrays, Pre-Biased
REF: BCR 116S H6727 Infineon Technologies
BCR 116S H6727

Infineon Technologies

TRANS 2NPN PREBIAS 0.25W SOT363

BCR 116S H6727 is a Transistors - Bipolar (BJT) - Arrays, Pre-Biased manufactured by Infineon Technologies. TRANS 2NPN PREBIAS 0.25W SOT363. Key specifications: mounting type Surface Mount, package / case 6-VSSOP, SC-88, SOT-363, current - collector (ic) (max) 100mA, power - max 250mW.

Datasheet Request a Quote

In Stock: 8,942

Specifications

14 parameters
Product StatusDiscontinued at Digi-Key
Transistor Type2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)4.7kOhms
Resistor - Emitter Base (R2)47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)-
Frequency - Transition150MHz
Power - Max250mW
Mounting TypeSurface Mount
Package / Case6-VSSOP, SC-88, SOT-363
Supplier Device PackagePG-SOT363-PO

Related Products

NSBC143ZPDXV6T1G - onsemi onsemi NSBC143ZPDXV6T1G 0.08000 RFQ PRMH10Z - Nexperia USA Inc. Nexperia USA Inc. PRMH10Z 0.37000 RFQ NSBC114TPDXV6T1 - onsemi onsemi NSBC114TPDXV6T1 0.04000 RFQ PEMB1,115 - NXP USA Inc. NXP USA Inc. PEMB1,115 0.04000 RFQ NSVBC114YPDXV65G - onsemi onsemi NSVBC114YPDXV65G 0.04000 RFQ MUN5333DW1T1G - onsemi onsemi MUN5333DW1T1G 0.30000 RFQ

Manufacturers in Transistors - Bipolar (BJT) - Arrays, Pre-Biased

NXP USA Inc. Nexperia USA Inc. Panjit International Inc. Micro Commercial Co Toshiba Semiconductor and Storage Diotec Semiconductor NXP Semiconductors

Need a Quote for BCR 116S H6727?

Submit your RFQ and get a quote within 24 hours.

Submit RFQ View All Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Need components fast? Get pricing & lead time within 24 hours. Submit an RFQ →