RFQ List My Parts 0
Get a Quote Contact

BAT62E6327

In Stock: 4,913
BAT62E6327 - Infineon Technologies - Diodes - RF
REF: BAT62E6327 Infineon Technologies
BAT62E6327

Infineon Technologies

MIXER DIODE, LOW BARRIER

BAT62E6327 is a Diodes - RF manufactured by Infineon Technologies. MIXER DIODE, LOW BARRIER. Key specifications: operating temperature 150°C (TJ), package / case TO-253-4, TO-253AA, current - max 20 mA.

Datasheet Request a Quote

In Stock: 4,913

Specifications

10 parameters
Product StatusActive
Diode TypeSchottky - Anti-Parallel
Voltage - Peak Reverse (Max)40V
Current - Max20 mA
Capacitance @ Vr, F0.6pF @ 0V, 1MHz
Resistance @ If, F-
Power Dissipation (Max)100 mW
Operating Temperature150°C (TJ)
Package / CaseTO-253-4, TO-253AA
Supplier Device PackageSOT-143-4

Related Products

BA895H6327XTSA1 - Infineon Technologies Infineon Technologies BA895H6327XTSA1 0.38000 RFQ 1SV250-TB-E - onsemi onsemi 1SV250-TB-E 0.17000 RFQ MA4P504-1072T - MACOM Technology Solutions MACOM Technology Solutions MA4P504-1072T 6.91000 RFQ 1SV307(TPH3,F) - Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage 1SV307(TPH3,F) 0.36000 RFQ MA4P7493-134 - MACOM Technology Solutions MACOM Technology Solutions MA4P7493-134 3.90010 RFQ ID101 TO-71 6L - Linear Integrated Systems, Inc. Linear Integrated Systems, Inc. ID101 TO-71 6L 6.54000 RFQ

Manufacturers in Diodes - RF

Vishay General Semiconductor - Diodes Division NXP USA Inc. Nexperia USA Inc. Comchip Technology Micro Commercial Co Toshiba Semiconductor and Storage NTE Electronics, Inc GeneSiC Semiconductor MACOM Technology Solutions Solid State Inc. CEL Linear Integrated Systems, Inc.

Need a Quote for BAT62E6327?

Submit your RFQ and get a quote within 24 hours.

Submit RFQ View All Diodes - RF
Need components fast? Get pricing & lead time within 24 hours. Submit an RFQ →