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AIMW120R045M1XKSA1

In Stock: 8,894
AIMW120R045M1XKSA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: AIMW120R045M1XKSA1 Infineon Technologies
AIMW120R045M1XKSA1

Infineon Technologies

SICFET N-CH 1200V 52A TO247-3

AIMW120R045M1XKSA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. SICFET N-CH 1200V 52A TO247-3. Key specifications: mounting type Through Hole, operating temperature -40°C ~ 175°C (TJ), package / case TO-247-3.

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In Stock: 8,894

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C52A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs59mOhm @ 20A, 15V
Vgs(th) (Max) @ Id5.7V @ 10mA
Gate Charge (Qg) (Max) @ Vgs57 nC @ 15 V
Vgs (Max)+20V, -7V
Input Capacitance (Ciss) (Max) @ Vds2130 pF @ 800 V
FET Feature-
Power Dissipation (Max)228W (Tc)
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO247-3
Package / CaseTO-247-3

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