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HGTP3N60B3

In Stock: 2,000
HGTP3N60B3 - Harris Corporation - Transistors - IGBTs - Single
REF: HGTP3N60B3 Harris Corporation
HGTP3N60B3

Harris Corporation

7A, 600V, UFS N-CHANNEL IGBT

HGTP3N60B3 is a Transistors - IGBTs - Single manufactured by Harris Corporation. 7A, 600V, UFS N-CHANNEL IGBT. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-220-3, current - collector (ic) (max) 7 A.

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In Stock: 2,000

Specifications

17 parameters
Product StatusActive
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector (Ic) (Max)7 A
Current - Collector Pulsed (Icm)20 A
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 3.5A
Power - Max33.3 W
Switching Energy66µJ (on), 88µJ (off)
Input TypeStandard
Gate Charge21 nC
Td (on/off) @ 25°C18ns/105ns
Test Condition480V, 3.5A, 82Ohm, 15V
Reverse Recovery Time (trr)16 ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220

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