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HGTP10N40F1D

In Stock: 806
HGTP10N40F1D - Harris Corporation - Transistors - IGBTs - Single
REF: HGTP10N40F1D Harris Corporation
HGTP10N40F1D

Harris Corporation

12A, 400V, N-CHANNEL IGBT

HGTP10N40F1D is a Transistors - IGBTs - Single manufactured by Harris Corporation. 12A, 400V, N-CHANNEL IGBT. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-220-3, current - collector (ic) (max) 12 A.

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In Stock: 806

Specifications

17 parameters
Product StatusActive
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)400 V
Current - Collector (Ic) (Max)12 A
Current - Collector Pulsed (Icm)12 A
Vce(on) (Max) @ Vge, Ic2.5V @ 10V, 5A
Power - Max75 W
Switching Energy-
Input TypeStandard
Gate Charge13.4 nC
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220

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