RFQ List My Parts 0
Get a Quote Contact

HGTP10N40C1

In Stock: 1,977
HGTP10N40C1 - Harris Corporation - Transistors - IGBTs - Single
REF: HGTP10N40C1 Harris Corporation
HGTP10N40C1

Harris Corporation

10A, 400V, N-CHANNEL IGBT

HGTP10N40C1 is a Transistors - IGBTs - Single manufactured by Harris Corporation. 10A, 400V, N-CHANNEL IGBT. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-220-3, current - collector (ic) (max) 10 A.

Datasheet Request a Quote

In Stock: 1,977

Specifications

17 parameters
Product StatusActive
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)400 V
Current - Collector (Ic) (Max)10 A
Current - Collector Pulsed (Icm)17.5 A
Vce(on) (Max) @ Vge, Ic3.2V @ 20V, 17.5A
Power - Max60 W
Switching Energy-
Input TypeStandard
Gate Charge19 nC
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220-3

Related Products

FGS15N40LTF - Fairchild Semiconductor Fairchild Semiconductor FGS15N40LTF 0.51000 RFQ RJP30H1DPP-M1#T2 - Renesas Electronics America Inc Renesas Electronics America Inc RJP30H1DPP-M1#T2 1.71000 RFQ FGH80N60FD2TU - onsemi onsemi FGH80N60FD2TU 5.28000 RFQ STGF10M65DF2 - STMicroelectronics STMicroelectronics STGF10M65DF2 1.66000 RFQ FGB7N60UNDF - Fairchild Semiconductor Fairchild Semiconductor FGB7N60UNDF 1.03000 RFQ IRG7PH35UD-EP - Infineon Technologies Infineon Technologies IRG7PH35UD-EP 4.27440 RFQ

Manufacturers in Transistors - IGBTs - Single

Microsemi Corporation Micro Commercial Co Toshiba Semiconductor and Storage IXYS Rectron USA Alpha & Omega Semiconductor Inc. NTE Electronics, Inc Sanken Sanyo SemiQ

Need a Quote for HGTP10N40C1?

Submit your RFQ and get a quote within 24 hours.

Submit RFQ View All Transistors - IGBTs - Single
Need components fast? Get pricing & lead time within 24 hours. Submit an RFQ →