HGTG20N60B3 - Harris Corporation - Transistors - IGBTs - Single
REF: HGTG20N60B3 Harris Corporation
HGTG20N60B3

Harris Corporation

N-CHANNEL IGBT

HGTG20N60B3 is a Transistors - IGBTs - Single manufactured by Harris Corporation. N-CHANNEL IGBT. Key specifications: mounting type Through Hole, operating temperature -40°C ~ 150°C (TJ), package / case TO-247-3, current - collector (ic) (max) 40 A.

In Stock: 2,220

Specifications

17 parameters
Product StatusObsolete
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector (Ic) (Max)40 A
Current - Collector Pulsed (Icm)160 A
Vce(on) (Max) @ Vge, Ic2V @ 15V, 20A
Power - Max165 W
Switching Energy475µJ (on), 1.05mJ (off)
Input TypeStandard
Gate Charge80 nC
Td (on/off) @ 25°C-
Test Condition480V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247

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