HGTD3N60C3 - Harris Corporation - Transistors - IGBTs - Single
REF: HGTD3N60C3 Harris Corporation
HGTD3N60C3

Harris Corporation

6A, 600V, N-CHANNEL IGBT

HGTD3N60C3 is a Transistors - IGBTs - Single manufactured by Harris Corporation. 6A, 600V, N-CHANNEL IGBT. Key specifications: mounting type Through Hole, operating temperature -40°C ~ 150°C (TJ), package / case TO-251-3 Short Leads, IPak, TO-251AA, current - collector (ic) (max) 6 A.

In Stock: 4,718

Specifications

17 parameters
Product StatusActive
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector (Ic) (Max)6 A
Current - Collector Pulsed (Icm)24 A
Vce(on) (Max) @ Vge, Ic2V @ 15V, 3A
Power - Max33 W
Switching Energy-
Input TypeStandard
Gate Charge13.8 nC
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)10 ns
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
Supplier Device PackageI-Pak

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