RFQ List My Parts 0
Get a Quote Contact

HGTD10N50F1

In Stock: 2,649
HGTD10N50F1 - Harris Corporation - Transistors - IGBTs - Single
REF: HGTD10N50F1 Harris Corporation
HGTD10N50F1

Harris Corporation

10A, 500V N-CHANNEL IGBT

HGTD10N50F1 is a Transistors - IGBTs - Single manufactured by Harris Corporation. 10A, 500V N-CHANNEL IGBT. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-251-3 Short Leads, IPak, TO-251AA, current - collector (ic) (max) 12 A.

Datasheet Request a Quote

In Stock: 2,649

Specifications

17 parameters
Product StatusActive
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)500 V
Current - Collector (Ic) (Max)12 A
Current - Collector Pulsed (Icm)-
Vce(on) (Max) @ Vge, Ic2.5V @ 10V, 5A
Power - Max75 W
Switching Energy-
Input TypeStandard
Gate Charge13.4 nC
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
Supplier Device PackageI-PAK

Related Products

FGS15N40LTF - Fairchild Semiconductor Fairchild Semiconductor FGS15N40LTF 0.51000 RFQ RJP30H1DPP-M1#T2 - Renesas Electronics America Inc Renesas Electronics America Inc RJP30H1DPP-M1#T2 1.71000 RFQ FGH80N60FD2TU - onsemi onsemi FGH80N60FD2TU 5.28000 RFQ STGF10M65DF2 - STMicroelectronics STMicroelectronics STGF10M65DF2 1.66000 RFQ FGB7N60UNDF - Fairchild Semiconductor Fairchild Semiconductor FGB7N60UNDF 1.03000 RFQ IRG7PH35UD-EP - Infineon Technologies Infineon Technologies IRG7PH35UD-EP 4.27440 RFQ

Manufacturers in Transistors - IGBTs - Single

Microsemi Corporation Micro Commercial Co Toshiba Semiconductor and Storage IXYS Rectron USA Alpha & Omega Semiconductor Inc. NTE Electronics, Inc Sanken Sanyo SemiQ

Need a Quote for HGTD10N50F1?

Submit your RFQ and get a quote within 24 hours.

Submit RFQ View All Transistors - IGBTs - Single
Need components fast? Get pricing & lead time within 24 hours. Submit an RFQ →