Name: HGT1S7N60B3DS
Brand: Harris Corporation
SKU: HGT1S7N60B3DS
Availability: InStock

REF: HGT1S7N60B3DS Harris Corporation

HGT1S7N60B3DS

14 A, 600 V, UFS N-CHANNEL IGBT

HGT1S7N60B3DS is a Transistors - IGBTs - Single manufactured by Harris Corporation. 14 A, 600 V, UFS N-CHANNEL IGBT. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, current - collector (ic) (max) 14 A.

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In Stock: 2,081

Specifications

17 parameters

Product Status	Active
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	14 A
Current - Collector Pulsed (Icm)	56 A
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 7A
Power - Max	60 W
Switching Energy	160µJ (on), 120µJ (off)
Input Type	Standard

Gate Charge	30 nC
Td (on/off) @ 25°C	26ns/130ns
Test Condition	480V, 7A, 50Ohm, 15V
Reverse Recovery Time (trr)	37 ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package	TO-263AB