Name: HGT1S12N60B3D
Brand: Harris Corporation
SKU: HGT1S12N60B3D
Price: 1.26 USD
Availability: InStock

REF: HGT1S12N60B3D Harris Corporation

HGT1S12N60B3D

Harris Corporation

27A, 600V, N-CHANNEL IGBT

HGT1S12N60B3D is a Transistors - IGBTs - Single manufactured by Harris Corporation. 27A, 600V, N-CHANNEL IGBT. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-262-3 Long Leads, I²Pak, TO-262AA, current - collector (ic) (max) 27 A.

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In Stock: 400

Specifications

17 parameters

Product Status	Active
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	27 A
Current - Collector Pulsed (Icm)	110 A
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 12A
Power - Max	104 W
Switching Energy	304µJ (on), 250µJ (off)
Input Type	Standard

Gate Charge	78 nC
Td (on/off) @ 25°C	26ns/150ns
Test Condition	480V, 12A, 25Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package	I2PAK (TO-262)