SIC SCHOTTKY DIODE 1200V 8A 2-PI
G5S12008C is a Diodes - Rectifiers - Single manufactured by Global Power Technology-GPT. SIC SCHOTTKY DIODE 1200V 8A 2-PI. Key specifications: mounting type Surface Mount, package / case TO-252-3, DPak (2 Leads + Tab), SC-63.
In Stock: 8,169
| Product Status | Active |
|---|---|
| Diode Type | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Average Rectified (Io) | 28.9A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 8 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 50 µA @ 1200 V |
|---|---|
| Capacitance @ Vr, F | 550pF @ 0V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | TO-252 |
| Operating Temperature - Junction | -55°C ~ 175°C |
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