G4S12010PM - Global Power Technology-GPT - Diodes - Rectifiers - Single
REF: G4S12010PM Global Power Technology-GPT
G4S12010PM

Global Power Technology-GPT

SIC SCHOTTKY DIODE 1200V 10A 2-P

G4S12010PM is a Diodes - Rectifiers - Single manufactured by Global Power Technology-GPT. SIC SCHOTTKY DIODE 1200V 10A 2-P. Key specifications: mounting type Through Hole, package / case TO-247-2.

In Stock: 3,270

Specifications

13 parameters
Product StatusActive
Diode TypeSilicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)1200 V
Current - Average Rectified (Io)33.2A (DC)
Voltage - Forward (Vf) (Max) @ If-
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0 ns
Current - Reverse Leakage @ Vr30 µA @ 1700 V
Capacitance @ Vr, F-
Mounting TypeThrough Hole
Package / CaseTO-247-2
Supplier Device PackageTO-247AC
Operating Temperature - Junction-55°C ~ 175°C

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