SIC SCHOTTKY DIODE 650V 10A 2-PI
G4S06510JT is a Diodes - Rectifiers - Single manufactured by Global Power Technology-GPT. SIC SCHOTTKY DIODE 650V 10A 2-PI. Key specifications: mounting type Through Hole, package / case TO-220-2 Isolated Tab.
In Stock: 4,793
| Product Status | Active |
|---|---|
| Diode Type | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 31.2A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 50 µA @ 650 V |
|---|---|
| Capacitance @ Vr, F | 550pF @ 0V, 1MHz |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 Isolated Tab |
| Supplier Device Package | TO-220ISO |
| Operating Temperature - Junction | -55°C ~ 175°C |
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