SIC SCHOTTKY DIODE 1200V 30A 3-P
G3S12030B is a Diodes - Rectifiers - Arrays manufactured by Global Power Technology-GPT. SIC SCHOTTKY DIODE 1200V 30A 3-P. Key specifications: mounting type Through Hole, package / case TO-247-3.
In Stock: 3,613
| Product Status | Active |
|---|---|
| Diode Configuration | 1 Pair Common Cathode |
| Diode Type | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Average Rectified (Io) (per Diode) | 42A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 15 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
|---|---|
| Current - Reverse Leakage @ Vr | 50 µA @ 1200 V |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247AB |
Vishay General Semiconductor - Diodes Division
NXP USA Inc.
Taiwan Semiconductor Corporation
Nexperia USA Inc.
Panjit International Inc.
Micro Commercial Co
Toshiba Semiconductor and Storage
IXYS
Diotec Semiconductor
SMC Diode Solutions
GeneSiC Semiconductor
Yangzhou Yangjie Electronic Technology Co.,Ltd
Submit your RFQ and get a quote within 24 hours.
