G3S12010A - Global Power Technology-GPT - Diodes - Rectifiers - Single
REF: G3S12010A Global Power Technology-GPT
G3S12010A

Global Power Technology-GPT

SIC SCHOTTKY DIODE 1200V 10A 2-P

G3S12010A is a Diodes - Rectifiers - Single manufactured by Global Power Technology-GPT. SIC SCHOTTKY DIODE 1200V 10A 2-P. Key specifications: mounting type Through Hole, package / case TO-220-2.

In Stock: 3,137

Specifications

13 parameters
Product StatusActive
Diode TypeSilicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)1200 V
Current - Average Rectified (Io)34.8A (DC)
Voltage - Forward (Vf) (Max) @ If1.7 V @ 10 A
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0 ns
Current - Reverse Leakage @ Vr50 µA @ 1200 V
Capacitance @ Vr, F770pF @ 0V, 1MHz
Mounting TypeThrough Hole
Package / CaseTO-220-2
Supplier Device PackageTO-220AC
Operating Temperature - Junction-55°C ~ 175°C

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