Name: GPA030A135MN-FDR
Brand: SemiQ
SKU: GPA030A135MN-FDR
Availability: InStock

REF: GPA030A135MN-FDR SemiQ

GPA030A135MN-FDR

IGBT 1350V 60A 329W TO3PN

GPA030A135MN-FDR is a Transistors - IGBTs - Single manufactured by SemiQ. IGBT 1350V 60A 329W TO3PN. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-3P-3, SC-65-3, current - collector (ic) (max) 60 A.

Datasheet Request a Quote

In Stock: 4,718

Specifications

17 parameters

Product Status	Obsolete
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	1350 V
Current - Collector (Ic) (Max)	60 A
Current - Collector Pulsed (Icm)	90 A
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 30A
Power - Max	329 W
Switching Energy	4.4mJ (on), 1.18mJ (off)
Input Type	Standard

Gate Charge	300 nC
Td (on/off) @ 25°C	30ns/145ns
Test Condition	600V, 30A, 5Ohm, 15V
Reverse Recovery Time (trr)	450 ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Supplier Device Package	TO-3PN