DIODE GEN 1.2KV 300A 3 TOWER
MURTA600120 is a Diodes - Rectifiers - Arrays manufactured by GeneSiC Semiconductor. DIODE GEN 1.2KV 300A 3 TOWER. Key specifications: mounting type Chassis Mount, package / case Three Tower.
In Stock: 1,504
| Product Status | Active |
|---|---|
| Diode Configuration | 1 Pair Common Cathode |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Average Rectified (Io) (per Diode) | 300A |
| Voltage - Forward (Vf) (Max) @ If | 2.6 V @ 300 A |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - |
|---|---|
| Current - Reverse Leakage @ Vr | 25 µA @ 1200 V |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Mounting Type | Chassis Mount |
| Package / Case | Three Tower |
| Supplier Device Package | Three Tower |
Vishay General Semiconductor - Diodes Division
NXP USA Inc.
Taiwan Semiconductor Corporation
Nexperia USA Inc.
Panjit International Inc.
Micro Commercial Co
Toshiba Semiconductor and Storage
IXYS
Diotec Semiconductor
SMC Diode Solutions
Yangzhou Yangjie Electronic Technology Co.,Ltd
Linear Integrated Systems, Inc.
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